ME7114S-G Todos los transistores

 

ME7114S-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME7114S-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: DFN3X3

 Búsqueda de reemplazo de ME7114S-G MOSFET

- Selecciónⓘ de transistores por parámetros

 

ME7114S-G datasheet

 ..1. Size:1491K  1
 me7114s-g.pdf pdf_icon

ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON) 7m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 10.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

 ..2. Size:1423K  matsuki electric
 me7114s-g.pdf pdf_icon

ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON) 7m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 10.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

 7.1. Size:1423K  1
 me7114s.pdf pdf_icon

ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON) 7m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 10.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

Otros transistores... ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , K4145 , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , ME80N75F-G , ME80N75T , ME80N75T-G , ME8107 .

History: MEE4294P-G | IAUC90N10S5N062 | MEE4294K-G

 

 

 

 

↑ Back to Top
.