ME7114S-G Todos los transistores

 

ME7114S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME7114S-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: DFN3X3
 

 Búsqueda de reemplazo de ME7114S-G MOSFET

   - Selección ⓘ de transistores por parámetros

 

ME7114S-G Datasheet (PDF)

 ..1. Size:1491K  1
 me7114s-g.pdf pdf_icon

ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

 ..2. Size:1423K  matsuki electric
 me7114s-g.pdf pdf_icon

ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

 7.1. Size:1423K  1
 me7114s.pdf pdf_icon

ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

Otros transistores... ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , IRFB3607 , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , ME80N75F-G , ME80N75T , ME80N75T-G , ME8107 .

History: WMO08N60C4

 

 
Back to Top

 


 
.