All MOSFET. ME7114S-G Datasheet

 

ME7114S-G Datasheet and Replacement


   Type Designator: ME7114S-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN3X3
 

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ME7114S-G Datasheet (PDF)

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ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

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ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

 7.1. Size:1423K  1
 me7114s.pdf pdf_icon

ME7114S-G

ME7114S-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7114S-G is the N-Channel logic enhancement mode power RDS(ON)7m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)10.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely l

Datasheet: ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , IRFB3607 , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , ME80N75F-G , ME80N75T , ME80N75T-G , ME8107 .

History: STF8NM60N | H5N2519P | NCEP30T21GU

Keywords - ME7114S-G MOSFET datasheet

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