MEE4294-G Todos los transistores

 

MEE4294-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MEE4294-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 704 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: SOP-8

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MEE4294-G datasheet

 ..1. Size:1518K  matsuki electric
 mee4294-g.pdf pdf_icon

MEE4294-G

MEE4294-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.1. Size:954K  matsuki electric
 mee4294k mee4294k-g.pdf pdf_icon

MEE4294-G

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

 7.2. Size:931K  matsuki electric
 mee4294k2 mee4294k2-g.pdf pdf_icon

MEE4294-G

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

 7.3. Size:1044K  matsuki electric
 mee4294t2.pdf pdf_icon

MEE4294-G

MEE4294T2 N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON) 11.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

MOSTRAR MÁS

Otros transistores... ME9435A , ME9435A-G , ME95N03 , ME95N03-G , ME95N03T , ME95N03T-G , MEE15N10-G , MEE3710-G , 18N50 , MESS84 , JCS10N60BT , JCS10N60CC , JCS10N60CT , JCS10N60FC , JCS10N60FT , JCS10N60ST , JCS10N65BT .

History: HM4354 | AOWF10N60 | SWD80N04V | 4N60L-TN3-R | RUF020N02 | SWD4N50K

 

 

 

 

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