Справочник MOSFET. MEE4294-G

 

MEE4294-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MEE4294-G
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.8 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 11.3 A
   Максимальная температура канала (Tj): 150 °C
   Выходная емкость (Cd): 704 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для MEE4294-G

 

 

MEE4294-G Datasheet (PDF)

 ..1. Size:1518K  matsuki electric
 mee4294-g.pdf

MEE4294-G MEE4294-G

MEE4294-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.1. Size:954K  matsuki electric
 mee4294k mee4294k-g.pdf

MEE4294-G MEE4294-G

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

 7.2. Size:931K  matsuki electric
 mee4294k2 mee4294k2-g.pdf

MEE4294-G MEE4294-G

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

 7.3. Size:1044K  matsuki electric
 mee4294t2.pdf

MEE4294-G MEE4294-G

MEE4294T2 N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON)11.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.4. Size:930K  matsuki electric
 mee4294p-g.pdf

MEE4294-G MEE4294-G

MEE4294P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

 7.5. Size:1111K  matsuki electric
 mee4294ht.pdf

MEE4294-G MEE4294-G

MEE4294HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 7.6. Size:928K  matsuki electric
 mee42942-g.pdf

MEE4294-G MEE4294-G

MEE42942-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE42942-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

 7.7. Size:905K  matsuki electric
 mee4294p2-g.pdf

MEE4294-G MEE4294-G

MEE4294P2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS

 7.8. Size:541K  matsuki electric
 mee4294hp-g.pdf

MEE4294-G MEE4294-G

MEE4294HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe MEE4294HP-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistor, using Force-MOS patented Extended Trench Gate Exceptional on-resistance and maximum DC current(ETG) technology. This advanced technology is esp

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