All MOSFET. MEE4294-G Datasheet

 

MEE4294-G Datasheet and Replacement


   Type Designator: MEE4294-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 704 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
 

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MEE4294-G Datasheet (PDF)

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MEE4294-G

MEE4294-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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MEE4294-G

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

 7.2. Size:931K  matsuki electric
 mee4294k2 mee4294k2-g.pdf pdf_icon

MEE4294-G

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

 7.3. Size:1044K  matsuki electric
 mee4294t2.pdf pdf_icon

MEE4294-G

MEE4294T2 N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON)11.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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Datasheet: ME9435A , ME9435A-G , ME95N03 , ME95N03-G , ME95N03T , ME95N03T-G , MEE15N10-G , MEE3710-G , RU6888R , MESS84 , JCS10N60BT , JCS10N60CC , JCS10N60CT , JCS10N60FC , JCS10N60FT , JCS10N60ST , JCS10N65BT .

History: IRF7842

Keywords - MEE4294-G MOSFET datasheet

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