KIA2306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KIA2306
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET KIA2306
KIA2306 Datasheet (PDF)
kia2306.pdf
3.5A 30V2306N-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =30V,R =0.057@V =10V,I =3.5ADS DS(on) GS D V =30V,R =0.094@V =4.5V,I =2.8ADS DS(on) GS D Power MOSFET 100% R testedg2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratings(T =25C,unless otherwise noted)AParameter Symbol Rating Units
kia2305.pdf
-3.5A-20V2305P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =-20V,R =0.055@V =-4.5V,I =-3.5ADS DS(on) GS D V =-20V,R =0.075@V =-2.5V,I =-3.0ADS DS(on) GS D V =-20V,R =0.095@V =-1.8V,I =-1.8ADS DS(on) GS D2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratingsParameter Symbol Rating UnitsDrain-sou
kia2302.pdf
N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTORKIA2302SEMICONDUCTORS1.DescriptionThe KIA2302 is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.Because high-speed switching is possible,the IC can be efficiently set therebysaving energy. In order to counter static, a gate protect diode is built-in. The small SOT23 package ma
kia2300.pdf
MOSFET TRANSISTORS 2300 KIA SEMICONDUCTORS 1. Features VDS=20V,RDS(ON)=30m@ VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m@ VGS=4.5V,ID=3.0A VDS=20V,RDS(ON)=55m@ VGS=2.5V,ID=2.0A 2. Pin information DPin Function 1 GateG 2 Source3 DrainS3. Maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 VGate-source volt
kia2301.pdf
-2.8A-20V2301P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =-20V,R =0.12@V =-4.5V,I =-2.8ADS DS(on) GS D V =-20V,R =0.19@V =-2.5V,I =-1.8ADS DS(on) GS D2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratingsParameter Symbol Rating UnitsDrain-source voltage V -20 VDSGate-source voltage V +8 VGS
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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