All MOSFET. KIA2306 Datasheet

 

KIA2306 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA2306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.2 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
   Package: SOT23

 KIA2306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA2306 Datasheet (PDF)

 ..1. Size:98K  kia
 kia2306.pdf

KIA2306 KIA2306

3.5A 30V2306N-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =30V,R =0.057@V =10V,I =3.5ADS DS(on) GS D V =30V,R =0.094@V =4.5V,I =2.8ADS DS(on) GS D Power MOSFET 100% R testedg2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratings(T =25C,unless otherwise noted)AParameter Symbol Rating Units

 8.1. Size:101K  kia
 kia2305.pdf

KIA2306 KIA2306

-3.5A-20V2305P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =-20V,R =0.055@V =-4.5V,I =-3.5ADS DS(on) GS D V =-20V,R =0.075@V =-2.5V,I =-3.0ADS DS(on) GS D V =-20V,R =0.095@V =-1.8V,I =-1.8ADS DS(on) GS D2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratingsParameter Symbol Rating UnitsDrain-sou

 8.2. Size:21K  kia
 kia2302.pdf

KIA2306 KIA2306

N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTORKIA2302SEMICONDUCTORS1.DescriptionThe KIA2302 is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.Because high-speed switching is possible,the IC can be efficiently set therebysaving energy. In order to counter static, a gate protect diode is built-in. The small SOT23 package ma

 8.3. Size:318K  kia
 kia2300.pdf

KIA2306 KIA2306

MOSFET TRANSISTORS 2300 KIA SEMICONDUCTORS 1. Features VDS=20V,RDS(ON)=30m@ VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m@ VGS=4.5V,ID=3.0A VDS=20V,RDS(ON)=55m@ VGS=2.5V,ID=2.0A 2. Pin information DPin Function 1 GateG 2 Source3 DrainS3. Maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 VGate-source volt

 8.4. Size:97K  kia
 kia2301.pdf

KIA2306 KIA2306

-2.8A-20V2301P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =-20V,R =0.12@V =-4.5V,I =-2.8ADS DS(on) GS D V =-20V,R =0.19@V =-2.5V,I =-1.8ADS DS(on) GS D2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratingsParameter Symbol Rating UnitsDrain-source voltage V -20 VDSGate-source voltage V +8 VGS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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