KIA2306 - описание и поиск аналогов

3.5A 30V 2306 N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features V =30V,R =0.057 @V =10V,I =3.5A DS DS(on) GS D V =30V,R =0.094 @V =4.5V,I =2.8A DS DS(on) GS D Power MOSFET 100% R tested g 2.Symbol Pin Function 1 Gate 2 Source 3 Drain 3. Absolute maximumratings (T =25 C,unless otherwise noted) A Parameter Symbol Rating Units

-3.5A -20V 2305 P-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features V =-20V,R =0.055 @V =-4.5V,I =-3.5A DS DS(on) GS D V =-20V,R =0.075 @V =-2.5V,I =-3.0A DS DS(on) GS D V =-20V,R =0.095 @V =-1.8V,I =-1.8A DS DS(on) GS D 2.Symbol Pin Function 1 Gate 2 Source 3 Drain 3. Absolute maximumratings Parameter Symbol Rating Units Drain-sou

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR KIA 2302 SEMICONDUCTORS 1.Description The KIA2302 is a N-Channel Power MOS FET with low on-state resistance and ultra high- speed switching characteristics.Because high-speed switching is possible,the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT23 package ma

MOSFET TRANSISTORS 2300 KIA SEMICONDUCTORS 1. Features VDS=20V,RDS(ON)=30m @ VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @ VGS=4.5V,ID=3.0A VDS=20V,RDS(ON)=55m @ VGS=2.5V,ID=2.0A 2. Pin information D Pin Function 1 Gate G 2 Source 3 Drain S 3. Maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source volt

-2.8A -20V 2301 P-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features V =-20V,R =0.12 @V =-4.5V,I =-2.8A DS DS(on) GS D V =-20V,R =0.19 @V =-2.5V,I =-1.8A DS DS(on) GS D 2.Symbol Pin Function 1 Gate 2 Source 3 Drain 3. Absolute maximumratings Parameter Symbol Rating Units Drain-source voltage V -20 V DS Gate-source voltage V +8 V GS