L2N7002KN3T5G Todos los transistores

 

L2N7002KN3T5G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2N7002KN3T5G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 5.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm

Encapsulados: SOT883

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L2N7002KN3T5G datasheet

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L2N7002KN3T5G

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 l2n7002klt1g.pdf pdf_icon

L2N7002KN3T5G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002KLT1G 380 mAmps, 60 Volts N Channel SOT 23 S-L2N7002KLT1G FEATURES 3 1)ESD Protected 2)Low RDS(on) 1 3)Surface Mount Package 2 4)This is a Pb-Free Device 5)We declare that the material of product compliant with SOT 23 RoHS requirements and Halogen Free. 6) S- Prefix for Automotive and Other Applications Requiring Un

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L2N7002KN3T5G

L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 2. D

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L2N7002KN3T5G

JMTL2N7002KS Description JMT N-channel MOSFET Features Application V =60V, I =0.3A Battery Operated Systems DS D R

MOSTRAR MÁS

Otros transistores... KNY3703A , KPE4403A2 , KPE4703A , S-L2N7002DW1T1G , L2N7002FLT1G , L2N7002KDW1T1G , L2N7002KDW1T3G , L2N7002KLT1G , IRFP460 , S-L2N7002LT1G , L2N7002M3T5G , S-L2N7002M3T5G , L2N7002SDW1T1G , L2N7002SDW1T3G , L2N7002SLT1G , L2N7002SLT3G , L2N7002SWT1G .

History: AOB2144L | SM1A11NSK | WMN28N65F2

 

 

 

 

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