L2N7002KN3T5G Datasheet and Replacement
Type Designator: L2N7002KN3T5G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 5.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: SOT883
L2N7002KN3T5G substitution
L2N7002KN3T5G Datasheet (PDF)
l2n7002klt1g.pdf

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn
l2n7002kdw1t1g l2n7002kdw1t3g.pdf

L2N7002KDW1T1GS-L2N7002KDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected2. D
jmtl2n7002ks.pdf

JMTL2N7002KSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.3A Battery Operated SystemsDS DR
Datasheet: KNY3703A , KPE4403A2 , KPE4703A , S-L2N7002DW1T1G , L2N7002FLT1G , L2N7002KDW1T1G , L2N7002KDW1T3G , L2N7002KLT1G , IRFP460 , S-L2N7002LT1G , L2N7002M3T5G , S-L2N7002M3T5G , L2N7002SDW1T1G , L2N7002SDW1T3G , L2N7002SLT1G , L2N7002SLT3G , L2N7002SWT1G .
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