L2N7002KN3T5G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: L2N7002KN3T5G
Маркировка: RK
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.32 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 0.7 nC
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 5.4 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
Тип корпуса: SOT883
Аналог (замена) для L2N7002KN3T5G
L2N7002KN3T5G Datasheet (PDF)
l2n7002kn3t5g.pdf
l2n7002klt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn
l2n7002kdw1t1g l2n7002kdw1t3g.pdf
L2N7002KDW1T1GS-L2N7002KDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected2. D
l2n7002dw1t1g s-l2n7002dw1t1g.pdf
L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE
l2n7002dmt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps, 60 VoltsL2N7002DMT1GNChannel SC74 We declare that the material of product compliance with RoHS requirements.MAXIMUM RATINGSRating Symbol Value UnitSC-74DrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc115 mAMPSDrain Current ID 115 mAdc Continuous TC = 25C (Note 1
l2n7002lt1g s-l2n7002lt1g.pdf
L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.
l2n7002m3t5g s-l2n7002m3t5g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap
l2n7002sdw1t1g l2n7002sdw1t3g.pdf
L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS
l2n7002lt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd
l2n7002wt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mA, 60 VL2N7002WT1GNChannel SOT3233 We declare that the material of product compliance with RoHS requirements.1 ESD Protected:1000V2MAXIMUM RATINGSSOT 323 (SC-70)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSim
l2n7002swt1g s-l2n7002swt1g.pdf
L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R
l2n7002slt1g l2n7002slt3g.pdf
L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS
l2n7002dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps,60 VoltsL2N7002DW1T1GNChannel SC-88 Pb-Free Package is Available. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcDrain Current ID 115 mAdcID 75- Continuous TC = 25C (Note 1)IDM 800- Continuo
l2n7002flt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002FLT1G30 VoltsNChannel SOT233 We declare that the material of product are Halogen Free andcompliance with RoHS requirements. 12FEATURES CASE 318, STYLE 21SOT 23 (TO236AB) RDS(ON) 8@VGS=4V RDS(ON) 13@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exce
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Список транзисторов
Обновления
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