SLD65R700S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLD65R700S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 16 nC
Tiempo de subida (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 27 pF
Resistencia entre drenaje y fuente RDS(on): 0.7 Ohm
Paquete / Cubierta: TO252
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SLD65R700S2 Datasheet (PDF)
sld65r700s2 slu65r700s2.pdf
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sld65r950s2.pdf
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SLD65R420S2/SLU65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe
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