SLD65R700S2 - аналоги и даташиты транзистора

 

SLD65R700S2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLD65R700S2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для SLD65R700S2

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLD65R700S2 Datasheet (PDF)

 ..1. Size:982K  maple semi
 sld65r700s2 slu65r700s2.pdf pdf_icon

SLD65R700S2

SLD65R700S2/SLU65R700S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 650V, RDS(on)typ= 0.55@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 8.1. Size:5183K  maple semi
 sld65r380e7c.pdf pdf_icon

SLD65R700S2

SLD65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.2. Size:5187K  maple semi
 sld65r280e7c.pdf pdf_icon

SLD65R700S2

SLD65R280E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A, 650V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.3. Size:791K  maple semi
 sld65r950s2.pdf pdf_icon

SLD65R700S2

SLD65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , CS150N03A8 , SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , SLU70R600S2 , SLD70R900S2 , SLF70R900S2 .

History: SDF04N60 | IRFR15N20DTR | IRFL110TR | APT5030BN | SLU65R700S2 | IRF7351 | JMSL0301TG

 

 
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