SLD65R700S2 - описание и поиск аналогов

 

SLD65R700S2. Аналоги и основные параметры

Наименование производителя: SLD65R700S2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 29 ns

Cossⓘ - Выходная емкость: 27 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm

Тип корпуса: TO252

Аналог (замена) для SLD65R700S2

- подборⓘ MOSFET транзистора по параметрам

 

SLD65R700S2 даташит

 ..1. Size:982K  maple semi
 sld65r700s2 slu65r700s2.pdf pdf_icon

SLD65R700S2

SLD65R700S2/SLU65R700S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 650V, RDS(on)typ= 0.55 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

 8.1. Size:5183K  maple semi
 sld65r380e7c.pdf pdf_icon

SLD65R700S2

SLD65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

 8.2. Size:5187K  maple semi
 sld65r280e7c.pdf pdf_icon

SLD65R700S2

SLD65R280E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A, 650V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

 8.3. Size:791K  maple semi
 sld65r950s2.pdf pdf_icon

SLD65R700S2

SLD65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , CS150N03A8 , SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , SLU70R600S2 , SLD70R900S2 , SLF70R900S2 .

 

 

 

 

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