SLD65R700S2 Datasheet: MOSFET, N-Ch, 650V, 7A. Full specification with pinout and replacement list

SLD65R700S2 Datasheet. Specs and Replacement

Type Designator: SLD65R700S2 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO252

SLD65R700S2 substitution

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SLD65R700S2 datasheet

..1. Size:982K maple semi
sld65r700s2 slu65r700s2.pdf pdf_icon

SLD65R700S2/SLU65R700S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 650V, RDS(on)typ= 0.55 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per... See More ⇒

8.1. Size:5183K maple semi
sld65r380e7c.pdf pdf_icon

SLD65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

8.2. Size:5187K maple semi
sld65r280e7c.pdf pdf_icon

SLD65R280E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A, 650V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

8.3. Size:791K maple semi
sld65r950s2.pdf pdf_icon

SLD65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h... See More ⇒