SLF65R300S2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLF65R300S2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm

Encapsulados: TO220F

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SLF65R300S2 datasheet

 ..1. Size:484K  maple semi
 slf65r300s2.pdf pdf_icon

SLF65R300S2

SLF65R300S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 15A, 650V, RDS(on)typ= 0.26 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 24nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, a

 7.1. Size:2495K  maple semi
 slf65r380e7c.pdf pdf_icon

SLF65R300S2

SLF65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

 8.1. Size:2126K  maple semi
 slf65r1k2e7.pdf pdf_icon

SLF65R300S2

SLF65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A*, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin

 8.2. Size:766K  maple semi
 slf65r950s2.pdf pdf_icon

SLF65R300S2

SLF65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h

MOSTRAR MÁS

Otros transistores... SLI80R850SJ, SLF3101, SLP3101, SLF50R140SJ, SLP50R140SJ, SLF60R080SS, SLF60R160S2, SLF60R650S2, IRLB3034, SLF65R700S2, SLF65R950S2, SLH60R080SS, SLP10N60C, SLF10N60C, SLP10N65A, SLF10N65A, SLP10N65C