SLF65R300S2 Todos los transistores

 

SLF65R300S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLF65R300S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de SLF65R300S2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SLF65R300S2 Datasheet (PDF)

 ..1. Size:484K  maple semi
 slf65r300s2.pdf pdf_icon

SLF65R300S2

SLF65R300S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 15A, 650V, RDS(on)typ= 0.26@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 24nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a

 7.1. Size:2495K  maple semi
 slf65r380e7c.pdf pdf_icon

SLF65R300S2

SLF65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 8.1. Size:2126K  maple semi
 slf65r1k2e7.pdf pdf_icon

SLF65R300S2

SLF65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A*, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

 8.2. Size:766K  maple semi
 slf65r950s2.pdf pdf_icon

SLF65R300S2

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

MOSTRAR MÁS

Otros transistores... SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , SLP50R140SJ , SLF60R080SS , SLF60R160S2 , SLF60R650S2 , 60N06 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C .

History: AP4800DGM-HF | PTD3006 | IRHQ6110 | TSM4N60CH | SLF60R080SS | BTS282ZE | 2SK1386

 

 
Back to Top

 


 
.