All MOSFET. SLF65R300S2 Datasheet

 

SLF65R300S2 Datasheet and Replacement


   Type Designator: SLF65R300S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: TO220F
 

 SLF65R300S2 substitution

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SLF65R300S2 Datasheet (PDF)

 ..1. Size:484K  maple semi
slf65r300s2.pdf pdf_icon

SLF65R300S2

SLF65R300S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 15A, 650V, RDS(on)typ= 0.26@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 24nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a

 8.1. Size:766K  maple semi
slf65r950s2.pdf pdf_icon

SLF65R300S2

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

 8.2. Size:979K  maple semi
slf65r700s2.pdf pdf_icon

SLF65R300S2

SLF65R700S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 650V, RDS(on)typ= 0.55@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an

 8.3. Size:569K  maple semi
slp65r420s2 slf65r420s2.pdf pdf_icon

SLF65R300S2

SLP65R420S2/SLF65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

Datasheet: SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , SLP50R140SJ , SLF60R080SS , SLF60R160S2 , SLF60R650S2 , 60N06 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C .

History: SVS11N70SD2 | SRC60R950E | RJK0391DPA | STE140NF20D | AOD5T40P | AP9971GS-HF | NP84N075KUE

Keywords - SLF65R300S2 MOSFET datasheet

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