SLF65R300S2 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SLF65R300S2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 35.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 37 ns
Cossⓘ - Выходная емкость: 45 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.31 Ohm
Тип корпуса: TO220F
Аналог (замена) для SLF65R300S2
SLF65R300S2 Datasheet (PDF)
slf65r300s2.pdf

SLF65R300S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 15A, 650V, RDS(on)typ= 0.26@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 24nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a
slf65r380e7c.pdf

SLF65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch
slf65r1k2e7.pdf

SLF65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A*, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin
slf65r950s2.pdf

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h
Другие MOSFET... SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , SLP50R140SJ , SLF60R080SS , SLF60R160S2 , SLF60R650S2 , EMB04N03H , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C .
History: AOW11S60 | SHD219603 | SLP10N60C | IPAN60R360PFD7S | AP09N20BGI-HF | HMS85N95 | AP09N50P-HF
History: AOW11S60 | SHD219603 | SLP10N60C | IPAN60R360PFD7S | AP09N20BGI-HF | HMS85N95 | AP09N50P-HF



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