SLF16N50S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLF16N50S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 29.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 247 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: TO220F
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SLF16N50S datasheet
slp16n50s slf16n50s.pdf
SLP16N50S / SLF16N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on) = 280m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 31nC) This advanced technology has been especially tailored - Low Crss ( typical 6.8pF) to minimize on-state resistance, provide superior switching - High rug
slp16n50c slf16n50c.pdf
SLP16N50C / SLF16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on)typ. = 305m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 52nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching
slf16n65s.pdf
SLF16N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 16A*, 650V, RDS(on),typ =0.42 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 37nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-
Otros transistores... SLF12N65C, SLP13N50A, SLF13N50A, SLP13N50C, SLF13N50C, SLP16N50C, SLF16N50C, SLP16N50S, IRFZ44, SLP18N50C, SLF18N50C, SLP20N50C, SLF20N50C, SLP2N65UZ, SLF2N65UZ, SLP32N20C, SLF32N20C
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