SLF16N50S Datasheet and Replacement
Type Designator: SLF16N50S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 29.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 247 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
SLF16N50S substitution
SLF16N50S Datasheet (PDF)
slp16n50s slf16n50s.pdf

SLP16N50S / SLF16N50S500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on) = 280m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 31nC)This advanced technology has been especially tailored - Low Crss ( typical 6.8pF)to minimize on-state resistance, provide superior switching - High rug
slp16n50c slf16n50c.pdf

SLP16N50C / SLF16N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
Datasheet: SLF12N65C , SLP13N50A , SLF13N50A , SLP13N50C , SLF13N50C , SLP16N50C , SLF16N50C , SLP16N50S , IRFZ44 , SLP18N50C , SLF18N50C , SLP20N50C , SLF20N50C , SLP2N65UZ , SLF2N65UZ , SLP32N20C , SLF32N20C .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - SLF16N50S MOSFET datasheet
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History: RFP5P12 | IRF820ASPBF | IRFY430CM



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