SLP5N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLP5N60C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 93 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 13 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 41 pF
Resistencia entre drenaje y fuente RDS(on): 2.5 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SLP5N60C
SLP5N60C Datasheet (PDF)
slp5n60c slf5n60c.pdf
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slp5n65c slf5n65c.pdf
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LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
