Справочник MOSFET. SLP5N60C

 

SLP5N60C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SLP5N60C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 93 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 41 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SLP5N60C

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLP5N60C Datasheet (PDF)

 ..1. Size:299K  maple semi
 slp5n60c slf5n60c.pdf pdf_icon

SLP5N60C

SLP5N60C/SLF5N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 600V, RDS(on)typ. = 2.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingpe

 8.1. Size:637K  maple semi
 slp5n65s slf5n65s.pdf pdf_icon

SLP5N60C

SLP5N65S/SLF5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)Max = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingper

 8.2. Size:359K  maple semi
 slp5n65c slf5n65c.pdf pdf_icon

SLP5N60C

SLP5N65C / SLF5N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)typ. = 2.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 9.1. Size:1128K  maple semi
 slp5n50s slf5n50s.pdf pdf_icon

SLP5N60C

LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLP2N65UZ , SLF2N65UZ , SLP32N20C , SLF32N20C , SLP40N26C , SLF40N26C , SLP5N50S , SLF5N50S , IRF9540 , SLF5N60C , SLP5N65C , SLF5N65C , SLP5N65S , SLF5N65S , SLP60R190S2 , SLF60R190S2 , SLP60R380S2 .

History: NVMFD5C466NL | APT50M50L2LLG | JCS7HN60F | BSC150N03LDG

 

 
Back to Top

 


 
.