SLP5N60C Datasheet. Specs and Replacement
Type Designator: SLP5N60C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220
SLP5N60C substitution
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SLP5N60C datasheet
slp5n60c slf5n60c.pdf
SLP5N60C/SLF5N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 600V, RDS(on)typ. = 2.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching pe... See More ⇒
slp5n65s slf5n65s.pdf
SLP5N65S/SLF5N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on)Max = 2.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 13nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching per... See More ⇒
slp5n65c slf5n65c.pdf
SLP5N65C / SLF5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on)typ. = 2.6 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒
slp5n50s slf5n50s.pdf
LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 500V, RDS(on) typ. = 1.12 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi... See More ⇒
Detailed specifications: SLP2N65UZ, SLF2N65UZ, SLP32N20C, SLF32N20C, SLP40N26C, SLF40N26C, SLP5N50S, SLF5N50S, 2N7000, SLF5N60C, SLP5N65C, SLF5N65C, SLP5N65S, SLF5N65S, SLP60R190S2, SLF60R190S2, SLP60R380S2
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