S-LNTK2575LT1G Todos los transistores

 

S-LNTK2575LT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: S-LNTK2575LT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.2 nS
   Cossⓘ - Capacitancia de salida: 22.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de S-LNTK2575LT1G MOSFET

   - Selección ⓘ de transistores por parámetros

 

S-LNTK2575LT1G Datasheet (PDF)

 ..1. Size:232K  lrc
lntk2575lt1g s-lntk2575lt1g.pdf pdf_icon

S-LNTK2575LT1G

LESHAN RADIO COMPANY, LTD.LNTK2575LT1GSmall Signal MOSFETS-LNTK2575LT1G25 V, 0.75 A, Single, N-Channel,ESD Protection, SOT-233Features Advance Planar Technology for Fast Switching, Low RDS(on)1 Higher Efficiency Extending Battery Life2 This is a Pb-Free Device S- Prefix for Automotive and Other Applications Requiring SOT 23 Unique Site and Control Ch

 8.1. Size:229K  lrc
lntk3043pt5g s-lntk3043pt5g.pdf pdf_icon

S-LNTK2575LT1G

LESHAN RADIO COMPANY, LTD.Power MOSFET20 V, 285 mA, P-Channel with ESDProtection, SOT-723LNTK3043PT5GFeaturesS-LNTK3043PT5G Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)

 9.1. Size:212K  lrc
lnta4001nt1g s-lnta4001nt1g.pdf pdf_icon

S-LNTK2575LT1G

LESHAN RADIO COMPANY, LTD.LNTA4001NT1GSmall Signal MOSFETS-LNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD ProtectionFeatures Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is AvailableSC-89 ESD Protected:2000VESD Protected:1500V S- Prefix for Automotive and Other Applications Requiring ESD

Otros transistores... LN235N3T5G , LN4501LT1G , LN8340DT1AG , LN8342DT1AG , LNA2306LT1G , S-LNA2306LT1G , S-LNTA4001NT1G , LNTK2575LT1G , MMIS60R580P , LNTK3043PT5G , S-LNTK3043PT5G , LP0404N3T5G , LP1480WT1G , S-LP1480WT1G , LP2301BLT1G , LP2301BLT3G , S-LP2305DSLT1G .

History: PTB14508E | AFP2367S | VN10KCSM4 | CTM08N50 | APT5018SFLLG | AUIRL3705ZL | FQD30N06LTF

 

 
Back to Top

 


 
.