S-LNTK2575LT1G Datasheet and Replacement
Type Designator: S-LNTK2575LT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 22.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT23
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S-LNTK2575LT1G Datasheet (PDF)
lntk2575lt1g s-lntk2575lt1g.pdf

LESHAN RADIO COMPANY, LTD.LNTK2575LT1GSmall Signal MOSFETS-LNTK2575LT1G25 V, 0.75 A, Single, N-Channel,ESD Protection, SOT-233Features Advance Planar Technology for Fast Switching, Low RDS(on)1 Higher Efficiency Extending Battery Life2 This is a Pb-Free Device S- Prefix for Automotive and Other Applications Requiring SOT 23 Unique Site and Control Ch
lntk3043pt5g s-lntk3043pt5g.pdf

LESHAN RADIO COMPANY, LTD.Power MOSFET20 V, 285 mA, P-Channel with ESDProtection, SOT-723LNTK3043PT5GFeaturesS-LNTK3043PT5G Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)
lnta4001nt1g s-lnta4001nt1g.pdf

LESHAN RADIO COMPANY, LTD.LNTA4001NT1GSmall Signal MOSFETS-LNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD ProtectionFeatures Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is AvailableSC-89 ESD Protected:2000VESD Protected:1500V S- Prefix for Automotive and Other Applications Requiring ESD
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - S-LNTK2575LT1G MOSFET datasheet
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History: GSM3030 | IRF6612



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