LP2501DT1G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

LP2501DT1G datasheet

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 110m @VGS=-4.5V RDS(ON) 150m @VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC We declare that the material of product are Halogen

9.1. Size:148K international rectifier
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PD - _____ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.008 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID = 90A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowes

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Dec 2018 HRLP250N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 100 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 20 m RDS(on), typ @4.5V 22 m Application Package & Internal Circuit Power Management in Inverter System TO-220 Synchronous Rectifi

Otros transistores... LP1480WT1G , S-LP1480WT1G , LP2301BLT1G , LP2301BLT3G , S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G , AOD4184A , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , LSI1012LT1G , S-LSI1012LT1G .