LP2501DT1G Datasheet and Replacement. Cross Reference Search

LP2501DT1G Datasheet (PDF)

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LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 110m@VGS=-4.5V RDS(ON) 150m@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC We declare that the material of product are Halogen

9.1. Size:148K international rectifier
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PD - _____IRLP2505PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 55VUltra Low On-ResistanceDynamic dv/dt RatingRDS(on) = 0.008175C Operating TemperatureFast SwitchingFully Avalanche RatedID = 90ADescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowes

9.2. Size:801K semihow
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Dec 2018 HRLP250N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 100 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 20 m RDS(on), typ @4.5V 22 m Application Package & Internal Circuit Power Management in Inverter System TO-220 Synchronous Rectifi

Datasheet: LP1480WT1G , S-LP1480WT1G , LP2301BLT1G , LP2301BLT3G , S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G , HY1906P , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , LSI1012LT1G , S-LSI1012LT1G .