LP2501DT1G Specs and Replacement

Type Designator: LP2501DT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: DFN2020-6S

LP2501DT1G substitution

- MOSFET ⓘ Cross-Reference Search

 

LP2501DT1G datasheet

 ..1. Size:1034K  lrc
lp2501dt1g.pdf pdf_icon

LP2501DT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 110m @VGS=-4.5V RDS(ON) 150m @VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC We declare that the material of product are Halogen... See More ⇒

 9.1. Size:148K  international rectifier
irlp2505.pdf pdf_icon

LP2501DT1G

PD - _____ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.008 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID = 90A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowes... See More ⇒

 9.2. Size:801K  semihow
hrlp250n10k.pdf pdf_icon

LP2501DT1G

Dec 2018 HRLP250N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 100 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 20 m RDS(on), typ @4.5V 22 m Application Package & Internal Circuit Power Management in Inverter System TO-220 Synchronous Rectifi... See More ⇒

Detailed specifications: LP1480WT1G, S-LP1480WT1G, LP2301BLT1G, LP2301BLT3G, S-LP2305DSLT1G, S-LP2307LT1G, LP2309LT1G, LP2309LT3G, AOD4184A, LP3218DT1G, S-LP3407LT1G, LP3415ELT1G, S-LP3415ELT1G, S-LP4101LT1G, LRC6N33YT1G, LSI1012LT1G, S-LSI1012LT1G

Keywords - LP2501DT1G MOSFET specs

 LP2501DT1G cross reference

 LP2501DT1G equivalent finder

 LP2501DT1G pdf lookup

 LP2501DT1G substitution

 LP2501DT1G replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility