5N65E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5N65E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16 nS
Cossⓘ - Capacitancia de salida: 53 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
Encapsulados: TO262
Búsqueda de reemplazo de 5N65E MOSFET
- Selecciónⓘ de transistores por parámetros
5N65E datasheet
0.1. Size:160K vishay
sihf15n65e.pdf 
SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U
0.2. Size:165K vishay
sihp15n65e.pdf 
SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U
0.3. Size:206K vishay
sihb15n65e.pdf 
SiHB15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 21
0.4. Size:1857K infineon
ikz75n65el5.pdf 
IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKZ75N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKZ75N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode Featu
0.5. Size:1975K infineon
ikw75n65eh5.pdf 
IKW75N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-rated RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E
0.6. Size:1427K infineon
ikz75n65es5.pdf 
IKZ75N65ES5 TRENCHSTOPTM 5 soft switching IGBT TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode Features and Benefits High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal current CEsat Plug and play replacement of previous generatio
0.7. Size:2169K infineon
ikz75n65eh5.pdf 
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode High speed series fifth generation Data sheet Industrial Power Control IKZ75N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode Features and Bene
0.8. Size:3294K infineon
ika15n65et6.pdf 
IKA15N65ET6 TRENCHSTOP IGBT6 IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode C Features and Benefits Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C Short circuit withstand time 3 s Trench and field-stop technology for 650V applications offers G very tight parameter distribution E high rugg
0.9. Size:1558K infineon
ikb15n65eh5.pdf 
IKB15N65EH5 High speed switching series 5th generation TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low Q G E IGBT copacked with full rated current RAPID 1 fas
0.10. Size:1927K infineon
ikw75n65el5.pdf 
IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKW75N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKW75N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode C Fe
0.11. Size:1927K infineon
ikw75n65es5.pdf 
IGBT TRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diode IKW75N65ES5 650V TRENCHSTOPTM 5 high speed soft switching duopak Data sheet Industrial Power Control IKW75N65ES5 TRENCHSTOPTM 5 soft switching IGBT TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode C Features and Benefits Hi
0.12. Size:650K way-on
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf 
WML25N6 MK25N65EM W 65EM, WM WMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S 0 Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate charge perf
0.13. Size:4695K desay
dm5n65e.pdf 
N MOS /N-Channel Power MOSFET DM5N65E RoHS FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
0.14. Size:1071K cn marching-power
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf 
MPBX15N65EF 650V-15A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution G C TO-220 E Type Marking Package Code C MPBP15N65EF MP15N65EF TO-220-3 MPBA15N65EF MP15N
0.15. Size:1093K cn marching-power
mpbw75n65e.pdf 
MPBW75N65E 650V-75A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Solar converters positive temperature coefficient in VCEsat UPS Low VCEsat fast switching Welding converters High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBW75N65E MP75N65E TO-247 1 Max
Otros transistores... S-LSI1012LT1G, S-SRK7002LT1G, 2N65F, 2N65E, 2N65D, 2N65N, 2N65M, 5N65D, IRF640, 5N65M, 5N65N, 6N65F, 6N65D, LNB10R040W3, LNB20N60, LNB20N65, LNB4N80