5N65E MOSFET. Datasheet pdf. Equivalent

R5N65 5N65F 5N65D 5N65E 5N65M 5N65NS E M I C O N D U C T O R650V N-Channel Power MOSFETFEATURESPRODUCT SUMMARYRDS(ON)

SiHF15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (U

SiHP15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (U

SiHB15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 21

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeIKZ75N65EL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKZ75N65EL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeFeatu

IKW75N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-ratedRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

IKZ75N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKZ75N65EH5650V DuoPack IGBT and diodeHigh speed series fifth generationData sheetIndustrial Power ControlIKZ75N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeFeatures and Bene

IKA15N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

IKB15N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeIKW75N65EL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW75N65EL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeCFe

IGBTTRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diodeIKW75N65ES5650V TRENCHSTOPTM 5 high speed soft switching duopakData sheetIndustrial Power ControlIKW75N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:Hi

WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

N MOS /N-Channel Power MOSFET DM5N65E RoHS FEATURESLOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY