5N65E. Аналоги и основные параметры
Наименование производителя: 5N65E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 53 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
Тип корпуса: TO262
Аналог (замена) для 5N65E
- подборⓘ MOSFET транзистора по параметрам
5N65E даташит
0.1. Size:160K vishay
sihf15n65e.pdf 

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U
0.2. Size:165K vishay
sihp15n65e.pdf 

SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U
0.3. Size:206K vishay
sihb15n65e.pdf 

SiHB15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 21
0.4. Size:1857K infineon
ikz75n65el5.pdf 

IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKZ75N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKZ75N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode Featu
0.5. Size:1975K infineon
ikw75n65eh5.pdf 

IKW75N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-rated RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E
0.6. Size:1427K infineon
ikz75n65es5.pdf 

IKZ75N65ES5 TRENCHSTOPTM 5 soft switching IGBT TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode Features and Benefits High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal current CEsat Plug and play replacement of previous generatio
0.7. Size:2169K infineon
ikz75n65eh5.pdf 

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode High speed series fifth generation Data sheet Industrial Power Control IKZ75N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode Features and Bene
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ika15n65et6.pdf 

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0.9. Size:1558K infineon
ikb15n65eh5.pdf 

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0.10. Size:1927K infineon
ikw75n65el5.pdf 

IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKW75N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKW75N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode C Fe
0.11. Size:1927K infineon
ikw75n65es5.pdf 

IGBT TRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diode IKW75N65ES5 650V TRENCHSTOPTM 5 high speed soft switching duopak Data sheet Industrial Power Control IKW75N65ES5 TRENCHSTOPTM 5 soft switching IGBT TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode C Features and Benefits Hi
0.12. Size:650K way-on
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dm5n65e.pdf 

N MOS /N-Channel Power MOSFET DM5N65E RoHS FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
0.14. Size:1071K cn marching-power
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf 

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0.15. Size:1093K cn marching-power
mpbw75n65e.pdf 

MPBW75N65E 650V-75A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Solar converters positive temperature coefficient in VCEsat UPS Low VCEsat fast switching Welding converters High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBW75N65E MP75N65E TO-247 1 Max
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