LNC08R160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LNC08R160
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 58 nC
   trⓘ - Tiempo de subida: 17.7 nS
   Cossⓘ - Capacitancia de salida: 196 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-220

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LNC08R160 Datasheet (PDF)

..1. Size:989K lonten
lnc08r160 lne08r160.pdf

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

8.1. Size:860K lonten
lnc08r220.pdf

LNC08R220Lonten N-channel 80V, 45A, 22m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 80VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 22mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

8.2. Size:1141K lonten
lnc08r055w3 lnd08r055w3 lne08r055w3.pdf

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per

8.3. Size:1349K lonten
lnc08r085 lnd08r085 lne08r085.pdf

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

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