LNC08R160 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LNC08R160  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.7 nS

Cossⓘ - Capacitancia de salida: 196 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-220

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LNC08R160 datasheet

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LNC08R160

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

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LNC08R160

LNC08R220 Lonten N-channel 80V, 45A, 22m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 80V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 22m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy p

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LNC08R160

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per

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LNC08R160

LNC08R085 LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

MOSTRAR MÁS

Otros transistores... LNC06R079, LNC06R110, LNC06R140, LNC06R200, LNC06R230, LNC07R085H, LNC08R055W3, LNC08R085, STP75NF75, LNC08R220, LNC10N60, LNC10N65, LNC10R040W3, LNC10R180, LNC12N60, LNC12N65, LNC13N50