Справочник MOSFET. LNC08R160

 

LNC08R160 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LNC08R160
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17.7 ns
   Cossⓘ - Выходная емкость: 196 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для LNC08R160

 

 

LNC08R160 Datasheet (PDF)

 ..1. Size:989K  lonten
 lnc08r160 lne08r160.pdf

LNC08R160 LNC08R160

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 8.1. Size:860K  lonten
 lnc08r220.pdf

LNC08R160 LNC08R160

LNC08R220Lonten N-channel 80V, 45A, 22m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 80VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 22mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

 8.2. Size:1141K  lonten
 lnc08r055w3 lnd08r055w3 lne08r055w3.pdf

LNC08R160 LNC08R160

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per

 8.3. Size:1349K  lonten
 lnc08r085 lnd08r085 lne08r085.pdf

LNC08R160 LNC08R160

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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