All MOSFET. LNC08R160 Datasheet

 

LNC08R160 Datasheet and Replacement


   Type Designator: LNC08R160
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.7 nS
   Cossⓘ - Output Capacitance: 196 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220
 

 LNC08R160 substitution

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LNC08R160 Datasheet (PDF)

 ..1. Size:989K  lonten
 lnc08r160 lne08r160.pdf pdf_icon

LNC08R160

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 8.1. Size:860K  lonten
 lnc08r220.pdf pdf_icon

LNC08R160

LNC08R220Lonten N-channel 80V, 45A, 22m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 80VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 22mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

 8.2. Size:1141K  lonten
 lnc08r055w3 lnd08r055w3 lne08r055w3.pdf pdf_icon

LNC08R160

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per

 8.3. Size:1349K  lonten
 lnc08r085 lnd08r085 lne08r085.pdf pdf_icon

LNC08R160

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

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Datasheet: LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , LNC06R230 , LNC07R085H , LNC08R055W3 , LNC08R085 , STP75NF75 , LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 , LNC10R180 , LNC12N60 , LNC12N65 , LNC13N50 .

History: JFPC5N80C | PTP16N06N | SFF11N80M | JCS40N25FC | PTA12N65 | IXKR25N80C | MC10N007L

Keywords - LNC08R160 MOSFET datasheet

 LNC08R160 cross reference
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 LNC08R160 replacement

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