LNE06R079 Todos los transistores

 

LNE06R079 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNE06R079
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 269 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
   Paquete / Cubierta: TO-263
 

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LNE06R079 Datasheet (PDF)

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 lnc06r079 lnd06r079 lne06r079.pdf pdf_icon

LNE06R079

LNC06R079/LND06R079/LNE06R079Lonten N-channel 60V, 90A, 7.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.9mGStechnology. This advanced technology has been I 90ADespecially tailored to minimize on-state resistance,provide superior switching performance, and wit

 7.1. Size:1130K  lonten
 lnc06r062 lnd06r062 lne06r062.pdf pdf_icon

LNE06R079

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit

 8.1. Size:1062K  lonten
 lnc06r140 lne06r140 lng06r140 lnh06r140.pdf pdf_icon

LNE06R079

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 8.2. Size:928K  lonten
 lnc06r110 lne06r110.pdf pdf_icon

LNE06R079

LNC06R110/LNE06R110Lonten N-channel 60V, 60A, 11m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 11mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

MOSTRAR MÁS

Otros transistores... LND5N50 , LND5N65B , LND7N60 , LND7N60D , LND7N65D , LNDN10N65 , LNDN12N65 , LNE06R062 , IRF1405 , LNE06R110 , LNE06R140 , LNE07R085H , LNE08R055W3 , LNE08R085 , LNE08R160 , LNE10N60 , LNE10N65 .

History: SQM50P04-09L | IRLR3714Z | FQA11N90-F109 | SQM85N10-10 | PTP20N65A | IRFPG40 | MSK3419DF

 

 
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