LNE06R079 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNE06R079
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 69 nC
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 269 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: TO-263
LNE06R079 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNE06R079 Datasheet (PDF)
lnc06r079 lnd06r079 lne06r079.pdf
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