LNH05R075 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNH05R075
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de LNH05R075 MOSFET
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LNH05R075 datasheet
lnh05r075 lng05r075.pdf
LNH05R075/LNG05R075 Lonten N-channel 50V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.5m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand h
lnh05r155 lng05r155.pdf
LNH05R155/LNG05R155 Lonten N-channel 50V, 40A, 15.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 15.5m GS technology. This advanced technology has been I 40A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnh05r230 lng05r230.pdf
LNH05R230/LNG05R230 Lonten N-channel 50V, 32A, 23m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 23m GS technology. This advanced technology has been I 32A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig
lnh05r100 lng05r100.pdf
LNH05R100/LNG05R100 Lonten N-channel 50V, 64A, 10m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 10m GS technology. This advanced technology has been I 64A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig
Otros transistores... LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 , LNH04R165 , CS150N03A8 , LNH05R100 , LNH05R155 , LNH05R230 , LNH06R062 , LNH06R079 , LNH06R110 , LNH06R140 , LNH06R200 .
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