LNH05R075 Datasheet and Replacement. Cross Reference Search

LNH05R075 Datasheet (PDF)

..1. Size:951K lonten
lnh05r075 lng05r075.pdf pdf_icon

LNH05R075/LNG05R075Lonten N-channel 50V, 80A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h

8.1. Size:959K lonten
lnh05r155 lng05r155.pdf pdf_icon

LNH05R155/LNG05R155Lonten N-channel 50V, 40A, 15.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 15.5mGStechnology. This advanced technology has been I 40ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand

8.2. Size:940K lonten
lnh05r230 lng05r230.pdf pdf_icon

LNH05R230/LNG05R230Lonten N-channel 50V, 32A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 32ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

8.3. Size:927K lonten
lnh05r100 lng05r100.pdf pdf_icon

LNH05R100/LNG05R100Lonten N-channel 50V, 64A, 10m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 10mGStechnology. This advanced technology has been I 64ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

Datasheet: LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 , LNH04R165 , IRLB4132 , LNH05R100 , LNH05R155 , LNH05R230 , LNH06R062 , LNH06R079 , LNH06R110 , LNH06R140 , LNH06R200 .