LNN06R062 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNN06R062
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 393 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
Paquete / Cubierta: PPAK5X6
Búsqueda de reemplazo de LNN06R062 MOSFET
LNN06R062 Datasheet (PDF)
lnn06r062.pdf
LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy
lnn06r062.pdf
LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy
lnn06r140.pdf
LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p
lnn06r140.pdf
LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p
Otros transistores... LNH5N65B , LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , K2611 , LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 .
History: KRLML2502 | LNN04R075
History: KRLML2502 | LNN04R075
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