All MOSFET. LNN06R062 Datasheet

 

LNN06R062 Datasheet and Replacement


   Type Designator: LNN06R062
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 393 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: PPAK5X6
 

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LNN06R062 Datasheet (PDF)

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LNN06R062

LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy

 ..2. Size:913K  lonten
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LNN06R062

LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy

 8.1. Size:967K  1
 lnn06r140.pdf pdf_icon

LNN06R062

LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

 8.2. Size:967K  lonten
 lnn06r140.pdf pdf_icon

LNN06R062

LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

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Datasheet: LNH5N65B , LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , IRF520 , LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 .

History: STP10P6F6 | NVTFS5C453NL | IXTT50N30 | SIA527DJ | PMT280ENEA

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