LNN06R062 - Даташиты. Аналоги. Основные параметры
Наименование производителя: LNN06R062
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 393 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
Тип корпуса: PPAK5X6
Аналог (замена) для LNN06R062
LNN06R062 Datasheet (PDF)
lnn06r062.pdf
LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy
lnn06r062.pdf
LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy
lnn06r140.pdf
LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p
lnn06r140.pdf
LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p
Другие MOSFET... LNH5N65B , LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , K2611 , LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 .
History: IRLU3705Z | 2SJ187
Список транзисторов
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