LSD60R070HT Todos los transistores

 

LSD60R070HT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSD60R070HT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66.2 nS

Cossⓘ - Capacitancia de salida: 158 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO-220F

 Búsqueda de reemplazo de LSD60R070HT MOSFET

- Selecciónⓘ de transistores por parámetros

 

LSD60R070HT datasheet

 ..1. Size:1049K  lonten
lsb60r070ht lsd60r070ht.pdf pdf_icon

LSD60R070HT

LSB60R070HT/ LSD60R070HT LonFET Lonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.07 DS(on),max device has extremely low on resistance, making it I 141A DM especially suitable for applications which require Q 68nC g,typ superior pow

 7.1. Size:934K  lonten
lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSD60R070HT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 7.2. Size:941K  lonten
lsb60r092gt lsd60r092gt lse60r092gt.pdf pdf_icon

LSD60R070HT

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 7.3. Size:1047K  lonten
lsb60r099ht lsd60r099ht lse60r099ht.pdf pdf_icon

LSD60R070HT

LSB60R099HT/LSD60R099HT/LSE60R099HT LonFET Lonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 48nC g,typ

Otros transistores... LSC70R640GT , LSC80R350GT , LSC80R680GT , LSC80R980GT , LSD50R160HT , LSD55R066GT , LSD55R140GF , LSD55R140GT , 5N65 , LSD60R092GF , LSD60R092GT , LSD60R099HT , LSD60R105HF , LSD60R125HT , LSD60R170GF , LSD60R170GT , LSD60R180HT .

History: IRF3000PBF | STD12NF06T4 | APTM100A23SCTG

 

 

 

 

↑ Back to Top
.