LSD60R070HT Specs and Replacement
Type Designator: LSD60R070HT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66.2 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-220F
LSD60R070HT substitution
- MOSFET ⓘ Cross-Reference Search
LSD60R070HT datasheet
lsb60r070ht lsd60r070ht.pdf
LSB60R070HT/ LSD60R070HT LonFET Lonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.07 DS(on),max device has extremely low on resistance, making it I 141A DM especially suitable for applications which require Q 68nC g,typ superior pow... See More ⇒
lsb60r092gf lsd60r092gf lse60r092gf.pdf
LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒
lsb60r092gt lsd60r092gt lse60r092gt.pdf
LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒
lsb60r099ht lsd60r099ht lse60r099ht.pdf
LSB60R099HT/LSD60R099HT/LSE60R099HT LonFET Lonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 48nC g,typ ... See More ⇒
Detailed specifications: LSC70R640GT, LSC80R350GT, LSC80R680GT, LSC80R980GT, LSD50R160HT, LSD55R066GT, LSD55R140GF, LSD55R140GT, 5N65, LSD60R092GF, LSD60R092GT, LSD60R099HT, LSD60R105HF, LSD60R125HT, LSD60R170GF, LSD60R170GT, LSD60R180HT
Keywords - LSD60R070HT MOSFET specs
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