Справочник MOSFET. LSD60R070HT

 

LSD60R070HT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSD60R070HT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 66.2 ns
   Cossⓘ - Выходная емкость: 158 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для LSD60R070HT

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSD60R070HT Datasheet (PDF)

 ..1. Size:1049K  lonten
lsb60r070ht lsd60r070ht.pdfpdf_icon

LSD60R070HT

LSB60R070HT/ LSD60R070HTLonFETLonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.07DS(on),maxdevice has extremely low on resistance, making it I 141ADMespecially suitable for applications which require Q 68nCg,typsuperior pow

 7.1. Size:934K  lonten
lsb60r092gf lsd60r092gf lse60r092gf.pdfpdf_icon

LSD60R070HT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 7.2. Size:941K  lonten
lsb60r092gt lsd60r092gt lse60r092gt.pdfpdf_icon

LSD60R070HT

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 7.3. Size:1047K  lonten
lsb60r099ht lsd60r099ht lse60r099ht.pdfpdf_icon

LSD60R070HT

LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ

Другие MOSFET... LSC70R640GT , LSC80R350GT , LSC80R680GT , LSC80R980GT , LSD50R160HT , LSD55R066GT , LSD55R140GF , LSD55R140GT , 4435 , LSD60R092GF , LSD60R092GT , LSD60R099HT , LSD60R105HF , LSD60R125HT , LSD60R170GF , LSD60R170GT , LSD60R180HT .

History: NTB18N06G | IRF034 | BUK9K35-60E

 

 
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