LSD80R2K8GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSD80R2K8GT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 34.2 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 7.7 nC
Tiempo de subida (tr): 33.7 nS
Conductancia de drenaje-sustrato (Cd): 8.78 pF
Resistencia entre drenaje y fuente RDS(on): 2.8 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET LSD80R2K8GT
LSD80R2K8GT Datasheet (PDF)
lsd80r2k8gt.pdf
LSD80R2K8GTLonFETLonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 2.8DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 7.7nCg,typsuperior power density and ou
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LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat
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LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which
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