LSD80R2K8GT Datasheet and Replacement
Type Designator: LSD80R2K8GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33.7 nS
Cossⓘ - Output Capacitance: 8.78 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220F
LSD80R2K8GT substitution
LSD80R2K8GT Datasheet (PDF)
lsd80r2k8gt.pdf

LSD80R2K8GTLonFETLonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 2.8DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 7.7nCg,typsuperior power density and ou
lsc80r680gt lsd80r680gt lse80r680gt lsf80r680gt lsg80r680gt lsh80r680gt.pdf

LSC80R680GT/LSD80R680GT/LSE80R680GT/LSF80R680GT/LSG80R680GT/LSH80R680GTLonFETLonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.68DS(on),maxdevice has extremely low on resistance, making it I 8ADMespecially suitable for applicat
lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf

LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat
lsb80r350gt lsc80r350gt lsd80r350gt lse80r350gt lsf80r350gt.pdf

LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which
Datasheet: LSD65R380HT , LSD65R570GT , LSD65R650HT , LSD65R930GT , LSD70R1KGT , LSD70R380GT , LSD70R450GT , LSD70R640GT , NCEP15T14 , LSD80R350GT , LSD80R680GT , LSD80R980GT , LSDN55R140GT , LSDN60R950HT , LSDN65R380GT , LSDN65R380HT , LSDN65R650HT .
History: HTJ500N03 | ELM5E401PA | CEP45N10 | DH100N03B13 | AFN3015S | 7N60L-TF3-T | HAT1125H
Keywords - LSD80R2K8GT MOSFET datasheet
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History: HTJ500N03 | ELM5E401PA | CEP45N10 | DH100N03B13 | AFN3015S | 7N60L-TF3-T | HAT1125H



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