LSD80R2K8GT MOSFET Datasheet: N-Ch, 800V, 2A. Full specification with pinout and replacement list

LSD80R2K8GT Specs and Replacement

Type Designator: LSD80R2K8GT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.7 nS

Cossⓘ - Output Capacitance: 8.78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-220F

LSD80R2K8GT substitution

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LSD80R2K8GT datasheet

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LSD80R2K8GT LonFET Lonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 850V DS j,max advanced super junction technology. The resulting R 2.8 DS(on),max device has extremely low on resistance, making it I 5A DM especially suitable for applications which require Q 7.7nC g,typ superior power density and ou... See More ⇒

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LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GT LonFET Lonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 850V DS j,max advanced super junction technology. The R 0.35 DS(on),max resulting device has extremely low on resistance, I 45A DM making it especially suitable for applications which ... See More ⇒

Detailed specifications: LSD65R380HT, LSD65R570GT, LSD65R650HT, LSD65R930GT, LSD70R1KGT, LSD70R380GT, LSD70R450GT, LSD70R640GT, IRF1405, LSD80R350GT, LSD80R680GT, LSD80R980GT, LSDN55R140GT, LSDN60R950HT, LSDN65R380GT, LSDN65R380HT, LSDN65R650HT