LSG70R1KGT Todos los transistores

 

LSG70R1KGT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSG70R1KGT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 13.2 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.08 Ohm
   Paquete / Cubierta: TO-252

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LSG70R1KGT Datasheet (PDF)

 ..1. Size:1160K  lonten
lsd70r1kgt lsg70r1kgt lsh70r1kgt.pdf

LSG70R1KGT
LSG70R1KGT

LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT LonFET Lonten N-channel 700V, 4A, 1.08 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 1.08 resulting device has extremely low on IDM 12A resistance, making it especially suitable for Qg,typ 13nC applications which require super

 8.1. Size:1391K  lonten
lsc70r380gt lsd70r380gt lse70r380gt lsf70r380gt lsg70r380gt.pdf

LSG70R1KGT
LSG70R1KGT

LSC70R380GT/LSD70R380GT/LSE70R380GT/LSF70R380GT/LSG70R380GTLonFETLonten N-channel 700V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 750VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 8.2. Size:1179K  lonten
lsd70r450gt lse70r450gt lsf70r450gt lsg70r450gt lsh70r450gt.pdf

LSG70R1KGT
LSG70R1KGT

LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 0.45 resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which

 8.3. Size:1238K  lonten
lsc70r640gt lsd70r640gt lsg70r640gt lsh70r640gt lsf70r640gt.pdf

LSG70R1KGT
LSG70R1KGT

LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic

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