LSG70R1KGT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSG70R1KGT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.08 Ohm
Тип корпуса: TO-252
Аналог (замена) для LSG70R1KGT
LSG70R1KGT Datasheet (PDF)
lsd70r1kgt lsg70r1kgt lsh70r1kgt.pdf
LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT LonFET Lonten N-channel 700V, 4A, 1.08 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 1.08 resulting device has extremely low on IDM 12A resistance, making it especially suitable for Qg,typ 13nC applications which require super
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LSC70R380GT/LSD70R380GT/LSE70R380GT/LSF70R380GT/LSG70R380GTLonFETLonten N-channel 700V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 750VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
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LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 0.45 resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which
lsc70r640gt lsd70r640gt lsg70r640gt lsh70r640gt lsf70r640gt.pdf
LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic
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Список транзисторов
Обновления
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