LSG70R1KGT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSG70R1KGT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.2 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.08 Ohm
Package: TO-252
LSG70R1KGT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSG70R1KGT Datasheet (PDF)
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History: 7NM70L-TN3-R
