LSGG04R028 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSGG04R028
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 57.6 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 18 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 67 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 2130 pF
Resistencia entre drenaje y fuente RDS(on): 0.0028 Ohm
Paquete / Cubierta: TO-252
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LSGG04R028 Datasheet (PDF)
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LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1
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