LSGG04R028 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGG04R028
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 57.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 2130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO-252
LSGG04R028 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGG04R028 Datasheet (PDF)
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