LSGG04R028 MOSFET Datasheet: N-Ch, 40V, 120A. Full specification with pinout and replacement list

LSGG04R028 Specs and Replacement

Type Designator: LSGG04R028

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 2130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO-252

LSGG04R028 substitution

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LSGG04R028 datasheet

..1. Size:771K lonten
lsgg04r028 lsgh04r028.pdf pdf_icon

LSGG04R028/LSGH04R028 Lonten N-channel 40V, 120A, 2.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.8m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and... See More ⇒

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LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029 Lonten N-channel 40V, 120A, 2.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.9m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior swit... See More ⇒

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LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance... See More ⇒

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LSGN03R020/LSGG03R020/LSGC03R020 Lonten N-channel 30V, 120A, 2.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using split gate trench DMOS R DS(on),max@ V =10V 2.0m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching perf... See More ⇒