LSGG04R028 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSGG04R028
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 57.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 18 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 67 nC
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 2130 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: TO-252
Аналог (замена) для LSGG04R028
LSGG04R028 Datasheet (PDF)
lsgg04r028 lsgh04r028.pdf
LSGG04R028/LSGH04R028Lonten N-channel 40V, 120A, 2.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.8mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf
LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf
LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance
lsgn03r020 lsgg03r020 lsgc03r020.pdf
LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf
lsgg06r098w3 lsgn06r098w3.pdf
LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,
lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf
LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1
lsgh08r060w3 lsgg08r060w3.pdf
LSGH08R060W3/LSGG08R060W3Lonten N-channel 85V, 80A, 6.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 85VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 6.0mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, a
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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